{"id":702,"date":"2018-11-26T00:00:04","date_gmt":"2018-11-25T16:00:04","guid":{"rendered":"https:\/\/frontbasic.sslab.org.cn\/q-spingroup\/?post_type=paper&#038;p=702"},"modified":"2025-03-19T14:19:20","modified_gmt":"2025-03-19T06:19:20","slug":"room-temperature-spin-injection-into-sic-via-schottky-barrier","status":"publish","type":"paper","link":"https:\/\/frontbasic.sslab.org.cn\/q-spingroup\/paper\/room-temperature-spin-injection-into-sic-via-schottky-barrier\/","title":{"rendered":"29. L. Huang, H. Wu, P. Liu, X. Zhang, B. S. Tao, C. H. Wan, Y. Yan, X. F. Han, Room temperature spin injection into SiC via Schottky barrier, Appl. Phys. Lett. 113, 222402 (2018)"},"content":{"rendered":"\n<div class=\"wp-block-buttons is-layout-flex\">\n<div class=\"wp-block-button\"><a class=\"wp-block-button__link wp-element-button\" href=\"https:\/\/pubs.aip.org\/aip\/apl\/article-abstract\/113\/22\/222402\/36589\/Room-temperature-spin-injection-into-SiC-via?redirectedFrom=fulltext\">\u67e5\u770b\u539f\u6587<\/a><\/div>\n<\/div>\n","protected":false},"featured_media":0,"template":"","acf":[],"_links":{"self":[{"href":"https:\/\/frontbasic.sslab.org.cn\/q-spingroup\/wp-json\/wp\/v2\/paper\/702"}],"collection":[{"href":"https:\/\/frontbasic.sslab.org.cn\/q-spingroup\/wp-json\/wp\/v2\/paper"}],"about":[{"href":"https:\/\/frontbasic.sslab.org.cn\/q-spingroup\/wp-json\/wp\/v2\/types\/paper"}],"wp:attachment":[{"href":"https:\/\/frontbasic.sslab.org.cn\/q-spingroup\/wp-json\/wp\/v2\/media?parent=702"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}