{"id":649,"date":"2018-12-31T00:00:21","date_gmt":"2018-12-30T16:00:21","guid":{"rendered":"https:\/\/frontbasic.sslab.org.cn\/q-spingroup\/?post_type=paper&#038;p=649"},"modified":"2025-03-19T14:20:23","modified_gmt":"2025-03-19T06:20:23","slug":"voltage-controlled-magnetoelectric-memory-and-logic-devices","status":"publish","type":"paper","link":"https:\/\/frontbasic.sslab.org.cn\/q-spingroup\/paper\/voltage-controlled-magnetoelectric-memory-and-logic-devices\/","title":{"rendered":"33. X. Li, A. Lee, S. A. Razavi, H. Wu, K. L. Wang, Voltage-controlled magnetoelectric memory and logic devices, MRS Bulletin 43, 970-977 (2018)"},"content":{"rendered":"\n<div class=\"wp-block-buttons is-layout-flex\">\n<div class=\"wp-block-button\"><a class=\"wp-block-button__link wp-element-button\" href=\"https:\/\/www.cambridge.org\/core\/journals\/mrs-bulletin\/article\/abs\/voltagecontrolled-magnetoelectric-memory-and-logic-devices\/10ED76795FF00C6826BA1CA736C7D613\">\u67e5\u770b\u539f\u6587<\/a><\/div>\n<\/div>\n","protected":false},"featured_media":0,"template":"","acf":[],"_links":{"self":[{"href":"https:\/\/frontbasic.sslab.org.cn\/q-spingroup\/wp-json\/wp\/v2\/paper\/649"}],"collection":[{"href":"https:\/\/frontbasic.sslab.org.cn\/q-spingroup\/wp-json\/wp\/v2\/paper"}],"about":[{"href":"https:\/\/frontbasic.sslab.org.cn\/q-spingroup\/wp-json\/wp\/v2\/types\/paper"}],"wp:attachment":[{"href":"https:\/\/frontbasic.sslab.org.cn\/q-spingroup\/wp-json\/wp\/v2\/media?parent=649"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}