{"id":476,"date":"2021-11-03T13:26:00","date_gmt":"2021-11-03T05:26:00","guid":{"rendered":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/?post_type=patent&#038;p=476"},"modified":"2024-06-03T13:28:08","modified_gmt":"2024-06-03T05:28:08","slug":"%e5%9f%ba%e4%ba%8e%e5%85%b7%e6%9c%89%e6%8c%81%e7%bb%ad%e5%85%89%e7%94%b5%e5%af%bc%e6%95%88%e5%ba%94%e7%9a%84%e6%9d%90%e6%96%99%e7%9a%84%e6%88%90%e5%83%8f%e6%96%b9%e6%b3%95%e3%80%81%e8%ae%be%e5%a4%87","status":"publish","type":"patent","link":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/patent\/%e5%9f%ba%e4%ba%8e%e5%85%b7%e6%9c%89%e6%8c%81%e7%bb%ad%e5%85%89%e7%94%b5%e5%af%bc%e6%95%88%e5%ba%94%e7%9a%84%e6%9d%90%e6%96%99%e7%9a%84%e6%88%90%e5%83%8f%e6%96%b9%e6%b3%95%e3%80%81%e8%ae%be%e5%a4%87\/","title":{"rendered":"\u57fa\u4e8e\u5177\u6709\u6301\u7eed\u5149\u7535\u5bfc\u6548\u5e94\u7684\u6750\u6599\u7684\u6210\u50cf\u65b9\u6cd5\u3001\u8bbe\u5907\u53ca\u5e94\u7528"},"content":{"rendered":"","protected":false},"template":"","acf":[],"_links":{"self":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/patent\/476"}],"collection":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/patent"}],"about":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/types\/patent"}],"wp:attachment":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/media?parent=476"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}