{"id":619,"date":"2025-02-10T09:23:53","date_gmt":"2025-02-10T01:23:53","guid":{"rendered":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/?post_type=paper&#038;p=619"},"modified":"2025-02-10T09:23:53","modified_gmt":"2025-02-10T01:23:53","slug":"probing-interfacial-states-in-%ce%b2-ga2o3-sio2-tfts-for-high-response-broad-band-photodetection","status":"publish","type":"paper","link":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/paper\/probing-interfacial-states-in-%ce%b2-ga2o3-sio2-tfts-for-high-response-broad-band-photodetection\/","title":{"rendered":"Probing interfacial states in \u03b2-Ga2O3\/SiO2 TFTs for high-response broad-band photodetection"},"content":{"rendered":"\n<p class=\"has-text-align-right\">\u6587\u7ae0\u53d1\u8868\u65f6\u95f4\uff1a2025\u5e741\u6708<\/p>\n\n\n\n<p><strong>Yonghui Zhang, Rui Zhu, Wenxing Huo, Huili Liang, Zengxia Mei<\/strong><\/p>\n\n\n\n<p class=\"has-pale-cyan-blue-color has-text-color\"><strong>Appl. Phys. Lett.&nbsp;126, 021605 (2025)<\/strong><\/p>\n\n\n\n<p>\u6587\u7ae0\u94fe\u63a5\uff1a<a href=\"https:\/\/doi.org\/10.1063\/5.0238245\">https:\/\/doi.org\/10.1063\/5.0238245<\/a><\/p>\n","protected":false},"featured_media":0,"template":"","acf":[],"_links":{"self":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/paper\/619"}],"collection":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/paper"}],"about":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/types\/paper"}],"wp:attachment":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/media?parent=619"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}