{"id":618,"date":"2025-02-10T09:23:46","date_gmt":"2025-02-10T01:23:46","guid":{"rendered":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/?post_type=paper&#038;p=618"},"modified":"2025-04-16T15:45:42","modified_gmt":"2025-04-16T07:45:42","slug":"amorphous-ga2o3-semiconductor-a-new-solution-for-robust-x-ray-dosimeters","status":"publish","type":"paper","link":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/paper\/amorphous-ga2o3-semiconductor-a-new-solution-for-robust-x-ray-dosimeters\/","title":{"rendered":"Amorphous Ga2O3 Semiconductor: A New Solution for Robust X-Ray Dosimeters"},"content":{"rendered":"\n<p class=\"has-text-align-right\">\u6587\u7ae0\u53d1\u8868\u65f6\u95f4\uff1a2025\u5e741\u670812\u65e5<\/p>\n\n\n\n<p><strong>Hang Shao, Jiahao Zou, Huili Liang,* Rui Zhu, Yonghui Zhang, Xiaozhi Zhan, Tao Zhu, Jihua Zhang, Yuan Li, Guangyu Zhang, and Zengxia Mei*<\/strong><\/p>\n\n\n\n<p class=\"has-pale-cyan-blue-color has-text-color\"><strong>Adv. Funct. Mater. 2025, 2421730<\/strong><\/p>\n\n\n\n<p>\u6587\u7ae0\u94fe\u63a5\uff1a<a href=\"https:\/\/doi.org\/10.1002\/adfm.202421730\">https:\/\/doi.org\/10.1002\/adfm.202421730<\/a><\/p>\n","protected":false},"featured_media":624,"template":"","acf":[],"_links":{"self":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/paper\/618"}],"collection":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/paper"}],"about":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/types\/paper"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/media\/624"}],"wp:attachment":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/media?parent=618"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}