{"id":612,"date":"2025-02-10T09:23:22","date_gmt":"2025-02-10T01:23:22","guid":{"rendered":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/?post_type=paper&#038;p=612"},"modified":"2025-02-10T09:23:22","modified_gmt":"2025-02-10T01:23:22","slug":"border-trap-enhanced-ga2o3-nonvolatile-optoelectronic-memory","status":"publish","type":"paper","link":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/paper\/border-trap-enhanced-ga2o3-nonvolatile-optoelectronic-memory\/","title":{"rendered":"Border Trap-Enhanced Ga2O3 Nonvolatile Optoelectronic Memory"},"content":{"rendered":"\n<p class=\"has-text-align-right\">\u53d1\u8868\u65f6\u95f4\uff1a2024\u5e7410\u670830\u65e5<\/p>\n\n\n\n<p class=\"has-text-align-left has-medium-font-size\"><strong>Yonghui Zhang,* Rui Zhu, Wenxing Huo, Huili Liang, and Zengxia Mei*<\/strong><\/p>\n\n\n\n<p class=\"has-pale-cyan-blue-color has-text-color has-medium-font-size\"><strong>Nano Letters. 2024, 24, 45, 14398\u201314404<\/strong><\/p>\n\n\n<div class=\"wp-block-image\">\n<figure class=\"aligncenter size-large\"><img decoding=\"async\" loading=\"lazy\" width=\"927\" height=\"1024\" src=\"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-content\/uploads\/sites\/22\/2025\/02\/Zhang\u6587\u7ae0\u56fe\u7247-1-927x1024.jpg\" alt=\"\" class=\"wp-image-614\" srcset=\"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-content\/uploads\/sites\/22\/2025\/02\/Zhang\u6587\u7ae0\u56fe\u7247-1-927x1024.jpg 927w, https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-content\/uploads\/sites\/22\/2025\/02\/Zhang\u6587\u7ae0\u56fe\u7247-1-272x300.jpg 272w, https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-content\/uploads\/sites\/22\/2025\/02\/Zhang\u6587\u7ae0\u56fe\u7247-1-768x848.jpg 768w, https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-content\/uploads\/sites\/22\/2025\/02\/Zhang\u6587\u7ae0\u56fe\u7247-1-1391x1536.jpg 1391w, https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-content\/uploads\/sites\/22\/2025\/02\/Zhang\u6587\u7ae0\u56fe\u7247-1-1855x2048.jpg 1855w, https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-content\/uploads\/sites\/22\/2025\/02\/Zhang\u6587\u7ae0\u56fe\u7247-1.jpg 1949w\" sizes=\"(max-width: 927px) 100vw, 927px\" \/><\/figure><\/div>\n\n\n<p>\u6587\u7ae0\u94fe\u63a5\uff1a<a href=\"https:\/\/doi.org\/10.1021\/acs.nanolett.4c04235\">https:\/\/doi.org\/10.1021\/acs.nanolett.4c04235<\/a><\/p>\n","protected":false},"featured_media":613,"template":"","acf":[],"_links":{"self":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/paper\/612"}],"collection":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/paper"}],"about":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/types\/paper"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/media\/613"}],"wp:attachment":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/media?parent=612"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}