{"id":524,"date":"2022-06-28T17:36:00","date_gmt":"2022-06-28T09:36:00","guid":{"rendered":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/?post_type=paper&#038;p=524"},"modified":"2024-06-03T18:35:13","modified_gmt":"2024-06-03T10:35:13","slug":"high-performance-igzo-ga2o3-dual-active-layer-thin-film-transistor-for-deep-uv-detection","status":"publish","type":"paper","link":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/paper\/high-performance-igzo-ga2o3-dual-active-layer-thin-film-transistor-for-deep-uv-detection\/","title":{"rendered":"High-performance IGZO\/Ga2O3\u00a0dual-active-layer thin film transistor for deep UV detection"},"content":{"rendered":"\n<p><a href=\";\">Zuyin Han<\/a>; <a href=\";\">Shuang Song<\/a>; <a href=\";\">Huili Liang<\/a>&nbsp; <a href=\";\">Hang Shao<\/a>; <a href=\";\">Sigui Hu<\/a>; <a href=\";\">Yan Wang<\/a>; <a href=\";\">Jiwei Wang<\/a>; <a href=\";\">Zengxia Mei<\/a><\/p>\n\n\n\n<p><a href=\"https:\/\/doi.org\/10.1063\/5.0089038\">https:\/\/doi.org\/10.1063\/5.0089038<\/a><\/p>\n","protected":false},"featured_media":540,"template":"","acf":[],"_links":{"self":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/paper\/524"}],"collection":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/paper"}],"about":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/types\/paper"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/media\/540"}],"wp:attachment":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/media?parent=524"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}