{"id":503,"date":"2021-05-26T15:18:00","date_gmt":"2021-05-26T07:18:00","guid":{"rendered":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/?post_type=paper&#038;p=503"},"modified":"2024-06-03T18:29:28","modified_gmt":"2024-06-03T10:29:28","slug":"dual-active-layer-ingazno-high-voltage-thin-film-transistors","status":"publish","type":"paper","link":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/paper\/dual-active-layer-ingazno-high-voltage-thin-film-transistors\/","title":{"rendered":"Dual-active-layer InGaZnO high-voltage thin-film transistors"},"content":{"rendered":"\n<p><strong>Wenxing Huo, Huili Liang, Yicheng Lu<\/strong> <strong>, Zuyin Han<\/strong> <strong>, Rui Zhu, Yanxin Sui,Tao Wang and Zengxia Mei<\/strong><\/p>\n\n\n\n<p><a href=\"https:\/\/doi.org\/10.1088\/1361-6641\/abfd17\">https:\/\/doi.org\/10.1088\/1361-6641\/abfd17<\/a><\/p>\n\n\n\n\n","protected":false},"featured_media":504,"template":"","acf":[],"_links":{"self":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/paper\/503"}],"collection":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/paper"}],"about":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/types\/paper"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/media\/504"}],"wp:attachment":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/media?parent=503"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}