{"id":500,"date":"2020-02-24T15:01:00","date_gmt":"2020-02-24T07:01:00","guid":{"rendered":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/?post_type=paper&#038;p=500"},"modified":"2024-06-03T18:20:56","modified_gmt":"2024-06-03T10:20:56","slug":"boosted-uv-photodetection-performance-in-chemically-etched-amorphous-ga2o3-thin-film-transistors","status":"publish","type":"paper","link":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/paper\/boosted-uv-photodetection-performance-in-chemically-etched-amorphous-ga2o3-thin-film-transistors\/","title":{"rendered":"Boosted UV Photodetection Performance in Chemically Etched Amorphous Ga2O3 Thin-Film Transistors"},"content":{"rendered":"\n<p><em>Zuyin Han, Huili Liang, Wenxing Huo, Xiaoshan Zhu, Xiaolong Du, and Zengxia Mei<\/em><\/p>\n\n\n\n<p><a href=\"https:\/\/oxidesemi.iphy.ac.cn\/result\/paper\/2020\/2020-zyhan-AOM.pdf\">Boosted UV Photodetection Performance in Chemically Etched Amorphous Ga2O3 Thin\u2010Film Transistors (iphy.ac.cn)<\/a><\/p>\n","protected":false},"featured_media":534,"template":"","acf":[],"_links":{"self":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/paper\/500"}],"collection":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/paper"}],"about":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/types\/paper"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/media\/534"}],"wp:attachment":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/media?parent=500"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}