{"id":493,"date":"2020-01-20T14:53:00","date_gmt":"2020-01-20T06:53:00","guid":{"rendered":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/?post_type=paper&#038;p=493"},"modified":"2024-06-03T18:20:46","modified_gmt":"2024-06-03T10:20:46","slug":"dual-source-device-architecture-for-self-diagnosis-and-correction-of-gate-bias-stress-instability-in-flexible-transparent-zno-thin-film-transistors","status":"publish","type":"paper","link":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/paper\/dual-source-device-architecture-for-self-diagnosis-and-correction-of-gate-bias-stress-instability-in-flexible-transparent-zno-thin-film-transistors\/","title":{"rendered":"Dual-source device architecture for self-diagnosis and correction of gate bias-stress instability in flexible transparent ZnO thin-film transistors"},"content":{"rendered":"\n<p>Yonghui Zhang , Zengxia Mei  , Junqiang Li  , Huili Liang , Xiaolong Du <\/p>\n\n\n\n<p><a href=\"https:\/\/doi.org\/10.1016\/j.jallcom.2020.153834\">https:\/\/doi.org\/10.1016\/j.jallcom.2020.153834<\/a><\/p>\n","protected":false},"featured_media":494,"template":"","acf":[],"_links":{"self":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/paper\/493"}],"collection":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/paper"}],"about":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/types\/paper"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/media\/494"}],"wp:attachment":[{"href":"https:\/\/frontbasic.sslab.org.cn\/oxide-semiconductor\/wp-json\/wp\/v2\/media?parent=493"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}